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Defects in amorphous oxide semicondutors

Research Achievements

Defects in amorphous oxide semicondutors

Present and former IGERT Trainees Pete Erslev (UO), David Hong (OSU) and Stephen Meyers (OSU) instigated a collaboration investigating the nature of electronic defects in amorphous oxide semiconductor devices on novel insulators. Transparent electronics based on amorphous oxide semiconductors are being rapidly realized, however progress will be limited without a fundamental understanding of the defect structure of the semiconductors and at interfaces in the devices. This research yielded the positive identification of an optically active defect at the insulator-semiconductor junction which may be the source of device degradation. P. Erslev presented this work at the Materials Research Society Fall 2008 meeting.