Skip to main content


Boosting semi-conductor capabilities

Research Achievements

Boosting semi-conductor capabilities

Oregon researchers have efficiently synthesized an elusive metal-hydroxide compound in high yields, potentially paving the way for improved precursor inks to boost semiconductor capabilities for large-area applications. The key to the "bottom-up" production of the first heterometallic gallium-indium hydroxide cluster was the substitution of nitroso-butylamine as an additive. The substitute was identified during a screening of potential alternatives by IGERT fellow Zachary Mensinger, in the lab of chemist Darren W. Johnson. The additive acts to optimize and speed crystallization, allowing for yields up to 95 percent. Comparable compounds made under caustic conditions often take months or even years to crystallize and result in low yields. "The benefit is that we can predictably control the Ga:In ratio in these structures at molecular levels, which can result in the same control in the fabrication of semiconductor thin films to tailor properties for specific applications," Johnson said.